
VLB13901A
Modular Automation Switches
The Velocity 3901 is a 1-slot Layer 1 automation switch with up to 96 ports of 10 GbE for managing test lab connectivity and topology.

VLB13903A
Modular Automation Switches
The Velocity 3903 is a 3-slot Layer 1 automation switch with up to 288 ports of 10 GbE, redundant power, and multi-protocol support.

VLB13912A
Modular Automation Switches
The Velocity 3912 is a 12-slot Layer 1 automation switch scaling to 1,152 ports of 10 GbE with redundant power and cross switch links.
DS2210A
Software
Detect, localize, and mitigate side-channel leakage before tape-out. Inspector SC2 Pre-Silicon Side-Channel Analysis enables hardware security, design, and verification teams to identify side-channel vulnerabilities during design phase and development, before silicon is manufactured (pre-silicon). While traditional post-silicon testing can determine whether leakage exists in a fabricated device, Inspector provides visibility into where leakage originates within the design, helping teams identify the root cause and evaluate mitigation strategies earlier in the development lifecycle. By analyzing register-transfer level (RTL), synthesized netlist, and gate-level designs using simulation test vectors and Value Change Dump (VCD) files, Inspector SC2 Pre-Silicon Side-Channel Analysis identifies which signals leak, how much they leak, when leakage occurs, and where it originates within the design. This visibility enables teams to validate countermeasures, compare design alternatives, and reduce the cost and risk of discovering vulnerabilities after fabrication.

B1500A
Parameter Analyzers
Keysight B1500A Semiconductor Device Parameter Analyzer is complete device characterization solution supporting versatile measurement capabilities for IV, CV and leading-edge fast pulsed IV measurement with uncompromised measurement reliability.

B1505A
Parameter Analyzers
B1505A Power Device Analyzer / Curve Tracer is a single box solution for power device evaluation from sub-pA to 10 kV & 1500 A. Precise measurement capabilities with 10 µs pulse and µΩ on-resistance measurements.